TECHCON 2000 Advanced Electro-Thermal Modeling and Simulation Techniques for Deep Sub-Micron Devices
نویسندگان
چکیده
The decreasing dimensions of IC devices is rendering the conventional heat diffusion equation highly inaccurate for electrothermal simulations of deep submicron devices. This work integrates the phonon Boltzmann Transport Equation (BTE) in deep sub-micron silicon devices and presents a general methodology for solving the BTE. The approach developed is applicable to both Si bulk and SOI devices and is consistent with failure voltage measurements during electrostatic discharge (ESD) for practical devices. Additionally, local thermal conductivities accounting for phonon boundary scattering at the gate oxide/silicon interface are presented and an implementation is demonstrated in the PROPHET device simulator with full electrothermal coupling. This is the first step toward capturing microscale heat transfer effects of the BTE with a modified heat flow equation, suitable for commercial device simulators.
منابع مشابه
Sub-continuum Thermal Simulations of Deep Sub-Micron Devices under ESD Conditions
The decreasing dimensions of IC devices is rendering the heat diffusion equation highly inaccurate for simulations of electrostatic discharge (ESD) phenomena. As dimensions of the heated region in the device are reduced far below 200 nm, neglecting the ballistic, sub-continuum nature of phonon conduction in the silicon lattice can strongly underpredict the temperature rise. This work integrates...
متن کاملProcess and Layout Dependent Substrate Resistance Modeling for Deep Sub-Micron ESD Protection Devices
This paper demonstrates a new methodology for bringing accurate substrate resistance modeling into circuit level ESD simulation. The impact of layout and process variations on the effective substrate resistance of deep sub-micron ESD devices is analyzed and modeled using a quasi mixed-mode approach. The substrate resistance simulated by this method shows good agreement with the values extracted...
متن کاملSimulation of the effect of sub- micron interface roughness on the stress distribution in functionally graded thermal barrier coatings (FG- TBC)
In this research, a numerical modeling was utilized to calculate the stresses caused during thermal cycling in a functionally graded thermal barrier coating (FG - TBC). The temperature – dependent material response of this protective material was taken into account and the effects of thermal cycle and interface morphology of the ceramic / metallic layer in functionally graded coating system wa...
متن کاملBehavioral Modeling and Simulation of Semiconductor Devices and Circuits Using VHDL-AMS
During the past few years, a lot of work has been done on behavioral models and simulation tools. But a need for modeling strategy still remains. The VHDL-AMS language supports the description of analog electronic circuits using Ordinary Differential Algebraic Equations (ODAEs), in addition to its support for describing discrete-event systems. For VHDL-AMS to be useful to the analog design ...
متن کاملDeep Sub-Micron Static Timing Analysis in Presence of Crosstalk
A complete and accurate method for static timing analysis of deep sub-micron devices in presence of crosstalk is introduced. This scheme provides an eficient plarforrn forfast and accurate static timing verijcution of large scale transistor and cell level netlists, with coupled interconnects and high switching speeds. This paper presents the solution to the crosstalk problem implemented in the ...
متن کامل